Researchers at China's IMECAS have built working gate-all-around transistors with stacked nanosheets, according to Tom's Hardware. The devices are aimed at 3nm-class process technology, but they were made without extreme ultraviolet (EUV) lithography.
This is a research milestone, not a commercial one. The report stresses that China remains years away from any practical implementation of a 3nm-class node. Producing a single transistor structure in the lab is far removed from manufacturing a full node with acceptable yields, reliable interconnects, and integration schemes.
Still, the work illustrates how Chinese research groups are pursuing alternatives to EUV. The demonstration shows progress, but it would be premature to treat it as equivalent to a full 3nm process from leading-edge fabs.