Gate-all-around transistors rely on stacked nanosheets to carry current, but the manufacturing process can introduce tiny variations between layers. According to Semiconductor Engineering, even small imbalances between those stacked nanosheets can distort device behavior in ways that are difficult to predict from geometry alone.
The article highlights an emerging approach that pairs virtual fabrication with stress physics. By simulating the mechanical stresses that arise during processing, engineers can better anticipate channel non-uniformity and evaluate design changes before committing to physical wafers.
This matters because stress effects are becoming a first-order concern as GAA structures push toward tighter process controls. The source suggests that coupling stress physics with virtual fabrication offers a practical path to solving the non-uniformity problem that geometry-based models miss.